Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

High Speed IGBT

文件：75.37 Kbytes 页数：2 Pages

IXYS

艾赛斯

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 48A 150W TO220AB

IXYS

艾赛斯

High Speed IGBT

VCES = 600 V IC25 = 48 A VCE(sat) = 2.5 V tfi typ = 170 ns Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplic

文件：107.58 Kbytes 页数：2 Pages

IXYS

艾赛斯

CoolMOS Power Transistor

文件：545.55 Kbytes 页数：12 Pages

INFINEON

英飞凌

CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • CoolMOS CFD designed for • Softswitching PWM Stages • LC

文件：338.46 Kbytes 页数：12 Pages

INFINEON

英飞凌