CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • CoolMOS CFD designed for • Softswitching PWM Stages • LC

文件：338.46 Kbytes 页数：12 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.185Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.98 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

文件：545.55 Kbytes 页数：12 Pages

Infineon

英飞凌

CoolMOS Power Transistor

文件：545.55 Kbytes 页数：12 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. \n CoolMOS™ CFD2 is rep ·Fourth series of CoolMOS™ market entry in 2004\n ·Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low\n ·Specific for phase-shift ZVS and DC-AC power applications;

Infineon

英飞凌