HIGH Voltage IGBT

HIGH Voltage IGBT S Series - Improved SCSOA Capability Features • High Blocking Voltage • Epitaxial Silicon drift region - fast switching - small tail current - low switching losses • MOS gate turn-on for drive simplicity Molding epoxies meet UL 94 V-0 flammability classif

文件：58.09 Kbytes 页数：2 Pages

IXYS

艾赛斯

S Series - Improved SCSOA Capability

HIGH Voltage IGBT with Diode S Series - Improved SCSOA Capability Features • High Blocking Voltage • Epitaxial Silicon drift region - fast switching - small tail current - low switching losses • MOS gate turn-on for drive simplicity • Molding epoxies meet UL 94 V-0 flammability clas

文件：56.54 Kbytes 页数：2 Pages

IXYS

艾赛斯

Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 30A 150W TO268

IXYS

艾赛斯

Short Circuit Rated PT IGBTs

·VCES :600V and 1200V\n·SCSOA capability\n·10 us short circuit withstand capability\n·B and B2 Class IGBTs with lower VCE (sat) optimized for Low to Medium Speed Applications;

Littelfuse

力特