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MGY40N60

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtimesuchasMotorControlDriv

MotorolaMotorola, Inc

摩托罗拉

MGY40N60D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

MotorolaMotorola, Inc

摩托罗拉

NGTB40N60FLWG

IGBT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NGTB40N60IHLWG

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SGF40N60

HighSpeedSwitching

CO-PAKIGBT FEATURES *HighSpeedSwitching *LowSaturationVoltage :VCE(sat)=2.0V(@Ic=20A) *HighInputImpedance *CO-PAK,IGBTwithFRD :Trr=42nS(typ.) APPLICATIONS *AC&DCMotorcontrols *GeneralPurposeInverters *Robotics,ServoC

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGF40N60UF

Ultra-FastIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFseriesprovideslowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features •HighSpeedSwitching •LowSa

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGF40N60UFD

HighSpeedSwitching

CO-PAKIGBT FEATURES *HighSpeedSwitching *LowSaturationVoltage :VCE(sat)=2.0V(@Ic=20A) *HighInputImpedance *CO-PAK,IGBTwithFRD :Trr=42nS(typ.) APPLICATIONS *AC&DCMotorcontrols *GeneralPurposeInverters *Robotics,ServoC

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60

Ultra-FastIGBT

GeneralDescription Fairchild®’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features •HighSpeedSwitching •LowSaturationVoltage:VCE(sat)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60

Ultra-FastIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60UF

Ultra-FastIGBT

GeneralDescription Fairchild®’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features •HighSpeedSwitching •LowSaturationVoltage:VCE(sat)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60UFD

Ultra-FastIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60UFD

Ultra-FastIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60UFDTU

Ultra-FastIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60UFTU

SGH40N60UF600VPTIGBT

GeneralDescription Fairchild®’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features •HighSpeedSwitching •LowSaturationVoltage:VCE(sat)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGP40N60

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedsw

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGP40N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedsw

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SiHFPS40N60K

EnhancedBodyDiodedV/dtCapability

VishayVishay Siliconix

威世科技

SIHG40N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    IXKN40N60C

  • 功能描述:

    MOSFET 40 Amps 600V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
24+
SOT-227B
30000
晶体管-分立半导体产品-原装正品
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IXYS
19+/20+
SOT-227B
1000
主打产品价格优惠.全新原装正品
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23+
MOSFETN-CH600V40ASOT-227
1690
专业代理销售半导体模块,能提供更多数量
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2022
MODULE
6800
原厂原装正品,价格超越代理
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IXYS
23+
SOT227
270
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
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IXYS
1809+
SOT-227
326
就找我吧!--邀您体验愉快问购元件!
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22+
NA
18
加我QQ或微信咨询更多详细信息,
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IXYS
22+
SOT2274 miniBLOC
9000
原厂渠道,现货配单
询价
更多IXKN40N60C供应商 更新时间2024-5-21 22:49:00