IGBT，场截止 (FS)，40 A，600 V

此款隔离门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的场截止 (FS) 沟槽结构，为要求苛刻的开关应用提供卓越性能，提供低导通状态电压，并最大限度降低开关损耗。 此款 IGBT 非常适合半桥谐振应用。 此器件集成了一个柔性、快速的共封装续流二极管，采用低正向电压。 • Low Saturation Voltage using Trench with Fieldstop Technology\n• Low Switching Loss;

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor (IGBT)

文件：184.19 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A TO247

ONSEMI

安森美半导体

IGBT

Features 600V,40A VCE(sat)(typ.)=2.3V@VGE=15V,IC=40A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description Trench IGBTs offer lower losses and higher energy efficiency for application such as SMPS, general inverter and other swit

文件：666.02 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

High Speed Switching

CO-PAK IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo C

文件：357.57 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Sa

文件：555.09 Kbytes 页数：7 Pages

Fairchild

仙童半导体