High Speed Switching

CO-PAK IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo C

文件：357.57 Kbytes 页数：8 Pages

Fairchild

仙童半导体

High Speed Switching

ONSEMI

安森美半导体

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Sa

文件：555.09 Kbytes 页数：7 Pages

Fairchild

仙童半导体

High Speed Switching

CO-PAK IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo C

文件：357.57 Kbytes 页数：8 Pages

Fairchild

仙童半导体

Package：TO-3P-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 100W TO3PF

ONSEMI

安森美半导体