IGBT，分离式，高性能

飞兆的绝缘栅极双极性晶体管(IGBT)提供低导通和开关损耗。 SGF5N150UF专为开关电源应用而设计。 •高速开关\n•低饱和电压： V CE(sat) = 4.7 V @ I C = 5A\n•高输入阻抗;

ONSEMI

安森美半导体

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impeda

文件：292.89 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Package：TO-3P-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1500V 10A 62.5W TO3PF

ONSEMI

安森美半导体

General Description

文件：291.67 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impeda

文件：289.87 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

General Description

General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A • High Input Impeda

文件：289.87 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体