Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guara

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MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

恩XP

IGBT

文件：247.74 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor (IGBT)

文件：184.19 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

IGBT

Features 600V,40A VCE(sat)(typ.)=2.3V@VGE=15V,IC=40A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description Trench IGBTs offer lower losses and higher energy efficiency for application such as SMPS, general inverter and other swit

文件：666.02 Kbytes 页数：3 Pages

GWSEMI

唯圣电子