IGBT 600V 40A FS1 太阳能/UPS

此款绝缘门极双极晶体管 (IGBT) 采用耐用和成本高效的沟槽结构，在要求较高的开关应用中提供卓越的性能，还能提供低导通状态电压和最低的开关损耗。 • Low Saturation Voltage using Trench with Field Stip Technology\n• Low Switching Loss Reduces System Power Dissipation\n• Soft Fast reverse Recovery Diode\n• Optimized for High Speed Switching\n• 5us Short Circuit capability\n• Inverter Welder;

ONSEMI

安森美半导体

丝印：40N60FL；Package：TO-247；IGBT

文件：247.74 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 257W TO247

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor (IGBT)

文件：184.19 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

IGBT

Features 600V,40A VCE(sat)(typ.)=2.3V@VGE=15V,IC=40A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA General Description Trench IGBTs offer lower losses and higher energy efficiency for application such as SMPS, general inverter and other swit

文件：666.02 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

High Speed Switching

CO-PAK IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V (@ Ic=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo C

文件：357.57 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司