PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

VDSS = 500 V ID25 = 16 A RDS(on) ≤ 400 mΩ Features Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density

文件：148.85 Kbytes 页数：4 Pages

IXYS

艾赛斯

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：299.67 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准 Polar™ MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

VDSS = 500 V ID25 = 16 A RDS(on) ≤ 400 mΩ Features Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density

文件：148.85 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：295.51 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：296.68 Kbytes 页数：2 Pages

ISC

无锡固电