CoolMOS Power MOSFET in ISOPLUS247 Package

CoolMOS Power MOSFET in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base Features ● ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for

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IXYS

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 38A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

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ISC

无锡固电

N通道超级结MOSFET

• 硅片固定在直接敷铜基板上\n• 第3代CoolMOS™\n功率MOSFET\n•增强的总功率密度\n•低热阻;

Littelfuse

力特

High Speed IGBT

Short Circuit SOA Capability. 40N60, 40N60A

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Low VCE(sat) IGBT, High Speed IGBT

Short Circuit SOA Capability. 40N60, 40N60A

文件：91.96 Kbytes 页数：6 Pages

IXYS

艾赛斯

Low VCE(sat) IGBT, High Speed IGBT

Short Circuit SOA Capability. 40N60, 40N60A

文件：91.96 Kbytes 页数：6 Pages

IXYS

艾赛斯