isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 34mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：327.7 Kbytes 页数：2 Pages

ISC

无锡固电

X2-Class HiPerFETTM

文件：202.33 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道 超-超级结MOSFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

N-Channel Enhancement Mode Power MOSFET

Description The RM100N65DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =65V,ID =100A RDS(ON)

文件：278.89 Kbytes 页数：7 Pages

RECTRON

丽正国际

650V/100mΩ N-channel SiC Power MOSFET

Features Low on-resistance RDS(on) Best thermal conductivity and behavior High speed switching Low capacitances and low gate charge Low gate resistance for high-frequency switching Easy to parallel Halogen Free, RoHS Compliant Applications Switching mode power supply PV inverter Unint

文件：321.76 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

650V/100mΩ N-channel SiC Power MOSFET

Features Low on-resistance RDS(on) Best thermal conductivity and behavior High speed switching Low capacitances and low gate charge Low gate resistance for high-frequency switching Easy to parallel Halogen Free, RoHS Compliant Applications Switching mode power supply PV inverter Unint

文件：317.98 Kbytes 页数：4 Pages

GWSEMI

唯圣电子