IXFX26N100P

Polar Power MOSFET HiPerFET

IXFK26N100P

PolarPowerMOSFETHiPerFET

IXFK26N100P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

IXFN26N100P

PolarPowerMOSFETHiPerFET

Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •Fastrecoverydiode •UnclampedInductive

IXFR26N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=430mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXFR26N100P

PolarPowerMOSFETHiPerFET

IXFX26N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=250A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon