HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox

文件：114.2 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET™ Power MOSFETs Q-Class

N-Channel Enhancement Mode\nAvalanche Rated, Low Qg, High dv/dt ● IXYS advanced low Qg process\n● Low gate charge and capacitances\n   - easier to drive\n   - faster switching\n● International standard packages\n● Low RDS (on)\n● Unclamped Inductive Switching (UIS) rated\n● Molding epoxies meet UL 94 V-0 flammability classificationAdvantages\n● PLUS 247™ package;

Littelfuse

力特

MegaMOS FET

MegaMOS™ FET N-Channel Enhancement Mode Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode power supplies • M

文件：59.23 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：380.75 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode

N-Channel Enhancement Mode Features ● Designed for linear operation ● International standard packages ● Unclamped Inductive Switching (UIS) rated. ● Molding epoxies meet UL 94 V-0 flammability classification ● Integrated gate resistor for easy paralleling ● Guaranteed FBSOA at 75°C Applica

文件：148.68 Kbytes 页数：5 Pages

IXYS

艾赛斯