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IXFX55N50F

HiPerRFTM Power MOSFETs

HiPerRF™PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped

IXYS

IXYS Integrated Circuits Division

IXFE55N50

HiPerFETTMPowerMOSFET

HiPerFETPowerMOSFET SingleDieMOSFET Features •Lowcostdirect-copperbondedaluminiumpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •2500Visolation •Lowdraintocasecapacitance •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •

IXYS

IXYS Integrated Circuits Division

IXFG55N50

HiPerFETPowerMOSFETsISOPLUS247

IXYS

IXYS Integrated Circuits Division

IXFK55N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK55N50

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc

IXYS

IXYS Integrated Circuits Division

IXFK55N50

HiPerRFPowerMOSFETs

HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped

IXYS

IXYS Integrated Circuits Division

IXFK55N50

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc

IXYS

IXYS Integrated Circuits Division

IXFK55N50F

HiPerRFTMPowerMOSFETs

HiPerRF™PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped

IXYS

IXYS Integrated Circuits Division

IXFK55N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFN55N50

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc

IXYS

IXYS Integrated Circuits Division

IXFN55N50

HiPerRFPowerMOSFETs

HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped

IXYS

IXYS Integrated Circuits Division

IXFN55N50

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc

IXYS

IXYS Integrated Circuits Division

IXFN55N50F

HiPerRFPowerMOSFETs

HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped

IXYS

IXYS Integrated Circuits Division

IXFR55N50

HiPerFET-TMPowerMOSFETsISOPLUS247-TM

HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance(

IXYS

IXYS Integrated Circuits Division

IXFR55N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

VDSS=500V ID25=55A RDS(on)=90mΩ trr≤250ns Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●RFcapableMosfets ●Lowgatechargeandcapacitances -easiertodrive -faste

IXYS

IXYS Integrated Circuits Division

IXFX55N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX55N50

HiPerFETPowerMOSFETs

IXYS

IXYS Integrated Circuits Division

IXFX55N50

HiPerRFPowerMOSFETs

HiPerFET™PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMosfets •Ruggedpolysilicongatecellstructure •Doublemetalprocessforlowgate resistance •Unclamped

IXYS

IXYS Integrated Circuits Division

IXFX55N50

HiPerFETPowerMOSFET

HiPerFET™PowerMOSFET SingleDieMOSFET Features •Internationalstandardpackages •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitride isolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Unc

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFX55N50F

  • 功能描述:

    MOSFET 500V 55A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS/艾赛斯
17+
PLUS247
31518
原装正品 可含税交易
询价
IXYS
24+
TO247
5000
全现原装公司现货
询价
IXYS
23+
TO-247
8650
受权代理!全新原装现货特价热卖!
询价
23+
N/A
38460
正品授权货源可靠
询价
IXYS
1746+
TO247
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
IXYS
23+
PLUS247
12300
全新原装真实库存含13点增值税票!
询价
IXYS
1931+
N/A
35
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS-RF
1809+
TO-247
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS/艾赛斯
23+
PLUS247
10000
公司只做原装正品
询价
IXYS/艾赛斯
23+
TO247
50000
全新原装正品现货,支持订货
询价
更多IXFX55N50F供应商 更新时间2024-5-13 14:01:00