IXFX15N100

HiPerFET Power MOSFETs

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXFX15N100

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXFX15N100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

IXFX15N100

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™); ·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types\n;

IXGA15N100C

IGBTLightspeedSeries

Features •Internationalstandardpackages JEDECTO-220ABandTO-263AA •Lowswitchinglosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblepowersupplies(UPS) •Switch-modeandresonant-mod

IXGP15N100C

IGBTLightspeedSeries

Features •Internationalstandardpackages JEDECTO-220ABandTO-263AA •Lowswitchinglosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblepowersupplies(UPS) •Switch-modeandresonant-mod