RM100N65DF中文资料丽正国际数据手册PDF规格书

描述 Description

The RM100N65DF uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

VDS =65V,ID =100A

RDS(ON)<2.8mΩ VGS=10V

RDS(ON)<5.4mΩ VGS=4.5V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Special process technology for high ESD capability