IXFX30N100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

IXFX30N100Q2

HiPerFET Power MOSFETs Q-Class

IXFX30N100Q2

HiPerFET Power MOSFETs Q2-Class

IXFX30N100Q2

N通道HiPerFET; • 国际标准包装\n• 双金属工艺带来较低的栅极电阻\n• 雪崩能量和电流额定值\n• 快速本征整流器\n• 较低的封装电感\n;

IXTB30N100L

PowerMOSFETswithExtendedFBSOA

IXTB30N100L

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=450mΩ(Max)@VGS=20V APPLICATIONS ·DC-DCConverters ·BatteryChargers ·TemperatureandLightingControls

IXTN30N100L

N-ChannelPowerMOSFET

IXTN30N100L

PowerMOSFETswithExtendedFBSOA

RM30N100HD

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=100V,ID=30A SpecialprocesstechnologyforhighESDcapability HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation RDS(ON)

RM30N100LD

N-ChannelEnhancementModePowerMOSFET