isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

Features • RF Capable MOSFETs • Double Metal Process for Low Gate Resistive • Avalanche Rated • Fast Intrinsic Rectifier Advantages • High Power Density • Easy to Mount • Space Savings Applications • DC-DC Converters • Switch-Mode and Resonant-Mode Power Supplies, >500kHz Switching • D

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IXYS

艾赛斯

HiPerRF Power MOSFETs

Features • RF Capable MOSFETs • Double Metal Process for Low Gate Resistive • Avalanche Rated • Fast Intrinsic Rectifier Advantages • High Power Density • Easy to Mount • Space Savings Applications • DC-DC Converters • Switch-Mode and Resonant-Mode Power Supplies, >500kHz Switching • D

文件：101.09 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs Q-CLASS

HiPerFET™ Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on

文件：606.09 Kbytes 页数：4 Pages

IXYS

艾赛斯

Switch Mode MOSFETs

·Laser driver, induction heating, switch mode power supplies & switching industrial apps\n·HiperRF MOSFET is ideal for most applications\n·Z-MOS MOSFET reduced capacitance = improved impedance & reduced driver design complexity\n·Two package family options: industry standard (TO-247) & high performa;

Littelfuse

力特

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特