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IXFX21N100F

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

Features • RF Capable MOSFETs • Double Metal Process for Low Gate Resistive • Avalanche Rated • Fast Intrinsic Rectifier Advantages • High Power Density • Easy to Mount • Space Savings Applications • DC-DC Converters • Switch-Mode and Resonant-Mode Power Supplies, >500kHz Switching • D

文件:98.84 Kbytes 页数:2 Pages

IXYS

艾赛斯

IXFX21N100F

HiPerRF Power MOSFETs

Features • RF Capable MOSFETs • Double Metal Process for Low Gate Resistive • Avalanche Rated • Fast Intrinsic Rectifier Advantages • High Power Density • Easy to Mount • Space Savings Applications • DC-DC Converters • Switch-Mode and Resonant-Mode Power Supplies, >500kHz Switching • D

文件:101.09 Kbytes 页数:2 Pages

IXYS

艾赛斯

IXFX21N100F

Switch Mode MOSFETs

·Laser driver, induction heating, switch mode power supplies & switching industrial apps\n·HiperRF MOSFET is ideal for most applications\n·Z-MOS MOSFET reduced capacitance = improved impedance & reduced driver design complexity\n·Two package family options: industry standard (TO-247) & high performa;

Littelfuse

力特

IXFX21N100Q

HiPerFET Power MOSFETs Q-CLASS

HiPerFET™ Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on

文件:606.09 Kbytes 页数:4 Pages

IXYS

艾赛斯

IXTK21N100

High Voltage MegaMOSTMFETs

Features • International standard packages • JEDECTO-264,epoxymeetUL94V-0 flammability classification • miniBLOC,(ISOTOP-compatible) with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance Applications • DC-DC conver

文件:137.16 Kbytes 页数:4 Pages

IXYS

艾赛斯

IXTN21N100

High Voltage MegaMOSTMFETs

Features • International standard packages • JEDECTO-264,epoxymeetUL94V-0 flammability classification • miniBLOC,(ISOTOP-compatible) with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Low package inductance Applications • DC-DC conver

文件:137.16 Kbytes 页数:4 Pages

IXYS

艾赛斯

技术参数

  • ID (A):

    21

  • RDS(ON):

    0.5

  • Package Style:

    PLUS247

供应商型号品牌批号封装库存备注价格
IXYS
1931+
N/A
86
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS-RF
25+
TO-247
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS/艾赛斯
23+
TO-247
50000
全新原装正品现货,支持订货
询价
IXYS
22+
NA
86
加我QQ或微信咨询更多详细信息,
询价
IXYS/艾赛斯
25+
TO-247
10000
原装现货假一罚十
询价
IXYS
22+
TO2473
9000
原厂渠道,现货配单
询价
IXYS-RF
2022+
TO-247-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS/艾赛斯
24+
TO-247
60000
全新原装现货
询价
IXYS/艾赛斯
23+
TO-247
31766
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IXYS
23+
TO-3P
5000
原装正品,假一罚十
询价
更多IXFX21N100F供应商 更新时间2026-1-29 10:19:00