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IRF820SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF820STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF820STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFI820A

AdvancedPowerMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=500V ♦LowerRDS(ON):2.000Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFI820B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFI820G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半导体

IRFI820G

HexfetPowermosfet

IRF

International Rectifier

IRFI820G

PowerMOSFET

FEATURES •Isolatedpackage •Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) •Sinktoleadcreepagedistance=4.8mm •DynamicdV/dtrating •Lowthermalresistance •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thir

VishayVishay Siliconix

威世科技威世科技半导体

IRFI820GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半导体

IRFI820GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRF820L

  • 功能描述:

    MOSFET N-CH 500V 2.5A TO-262

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    -

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
VishayIR
24+
TO-262
336
询价
IR
1816+
TO-262
6523
科恒伟业!只做原装正品,假一赔十!
询价
IR/VISHAY
22+
TO-220
20000
保证原装正品,假一陪十
询价
VISHAY
1503+
TO-262
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR/VISHAY
21+
TO-220
10000
原装现货假一罚十
询价
Vishay Siliconix
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
询价
Vishay Siliconix
21+
TO2623 Long Leads I2Pak TO262A
13880
公司只售原装,支持实单
询价
Vishay Siliconix
23+
TO2623 Long Leads I2Pak TO262A
9000
原装正品,支持实单
询价
IR/VISHAY
22+
TO-220
100000
代理渠道/只做原装/可含税
询价
Vishay Siliconix
2022+
TO-262-3,长引线,I2Pak,TO-26
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
更多IRF820L供应商 更新时间2025-5-6 16:30:00