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IRF823

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

文件:157.18 Kbytes 页数:5 Pages

FAIRCHILD

仙童半导体

IRF823

N-CHANNEL POWER MOSFETS

FEATURES ● Lower RDS(ON) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Lower input capacitance ● Extended safe operating area ● Improved high temperature reliability

文件:322.92 Kbytes 页数:6 Pages

SAMSUNG

三星

IRF823

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

文件:140.22 Kbytes 页数:2 Pages

MOTOROLA

摩托罗拉

IRF823

SEMICONDUCTORS

文件:2.43533 Mbytes 页数:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF823

isc N-Channel MOSFET Transistor

文件:68.51 Kbytes 页数:3 Pages

ISC

无锡固电

IRF823

N-Channel Power MOSFETs

文件:381.94 Kbytes 页数:5 Pages

ARTSCHIP

IRF823

Trans MOSFET N-CH 450V 2A 3-Pin(3+Tab) TO-220AB

NJS

新泽西半导体

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    75000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    450V

  • Maximum Continuous Drain Current:

    2A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
HARRIS
23+
65480
询价
HAR
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
询价
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-220
8000
只做原装现货
询价
IR
23+
TO-220
7000
询价
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
询价
TI
25+
TO-220AB
12369
样件支持,可原厂排单订货!
询价
TI
25+
TO-220AB
12421
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
HARRIS/哈里斯
23+
DIP
50000
全新原装正品现货,支持订货
询价
VB
25+
TO-
10000
原装现货假一罚十
询价
更多IRF823供应商 更新时间2026-4-17 15:02:00