IRF820STRLPBFA资料datasheet下载行情报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRF820STRLPBFA	文件：238.32 Kbytes Page：10 Pages	Power MOSFET 文件：238.32 Kbytes 页数：10 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRF820STRRPBFA	文件：238.32 Kbytes Page：10 Pages	Power MOSFET 文件：238.32 Kbytes 页数：10 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFI820A	文件：229.29 Kbytes Page：7 Pages	Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 2.000Ω (Typ.) 文件：229.29 Kbytes 页数：7 Pages	Fairchild 仙童半导体	Fairchild
IRFI820B	文件：649.33 Kbytes Page：9 Pages	500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h 文件：649.33 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild

更多IRF820STRLPBF供应商更新时间2025-12-20 16:30:00