丝印：H4L020090SC1；Package：TO247-4L；Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level inter

文件：331.89 Kbytes 页数：8 Pages

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安森美半导体

丝印：H4L028N170M1；Package：TO247-4L；Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm

Features • Typ. RDS(on) = 28 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • High Speed Switching with Low Capacitance (Coss = 200 pF) • 100 Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • UPS • DC/DC Converter • Boost Converter

文件：253.15 Kbytes 页数：8 Pages

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安森美半导体

丝印：H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 29 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107 nC) • High Speed Switching with Low Capacitance (Coss = 106 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical

文件：359.47 Kbytes 页数：8 Pages

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安森美半导体

丝印：H4L070120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 65 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 57 nC) • High Speed Switching with Low Capacitance (Coss = 57 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical A

文件：356.3 Kbytes 页数：8 Pages

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安森美半导体

丝印：H4L018N075SC；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 750 V, 13.5 m, 140 A

Features • Typ. RDS(on) = 13.5 m @ VGS = 18 V Typ. RDS(on) = 18 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 262 nC) • High Speed Switching with Low Capacitance (Coss = 365 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable Typical Applications • Automotive On Board C

文件：353.48 Kbytes 页数：8 Pages

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安森美半导体

丝印：H4L022120m3s；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 244 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are RoHS Compliant Typical Applications • Automotive On Board C

文件：339.96 Kbytes 页数：10 Pages

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安森美半导体

丝印：H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 29 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107 nC) • High Speed Switching with Low Capacitance (Coss = 106 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on

文件：359.79 Kbytes 页数：8 Pages

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安森美半导体

丝印：H4L045065SC1；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 33 m, 55 A

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant

文件：366.09 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：H4L070120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L

Features • Typ. RDS(on) = 65 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 57 nC) • High Speed Switching with Low Capacitance (Coss = 57 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on s

文件：356.57 Kbytes 页数：8 Pages

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安森美半导体