NVH4L022N120M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L; • Max RDS(on) = 30mΩ at Vgs =18V, Id = 60A\n• Typical RDS(on) = 22mΩ\n• Qualified for Automotive According to AEC−Q101\n• Automotive Grade\n• 15V to 18V Gate Drive\n• Devices are Pb−Free and are RoHS Compliant\n• New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses\n;

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

NVH4L022N120M3S

丝印：H4L022120m3s；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A

Features •Typ.RDS(on)=22m@VGS=18V •UltraLowGateCharge(QG(tot)=151nC) •HighSpeedSwitchingwithLowCapacitance(Coss=244pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •TheseDevicesareRoHSCompliant TypicalApplications •AutomotiveOnBoardC

NVH4L022N120M3S

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4

Features •Typ.RDS(on)=22m@VGS=18V •UltraLowGateCharge(QG(tot)=151nC) •HighSpeedSwitchingwithLowCapacitance(Coss=244pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(on

NVH4L022N120M3S_V01

Silicon Carbide (SiC) MOSFET – 22 mohm, 1200V, M3S, TO-247-4

Features •Typ.RDS(on)=22m@VGS=18V •UltraLowGateCharge(QG(tot)=151nC) •HighSpeedSwitchingwithLowCapacitance(Coss=244pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(on

NVH820S75L4SPC

ON/安森美
SSDC33

ON/安森美