丝印：H4L045065SC1；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 33 m, 55 A

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant

文件：366.09 Kbytes 页数：8 Pages

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Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 33 mohm, 650V, M2, TO247−4L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • Qualified for Automotive According to AEC−Q101\n• Automotive grade\n• 650V rated\n• Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 25A\n• High Speed Switching and Low Capacitance\n• 100% UIL Tested\n• Devices are RoHS Compliant;

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 33mohm, 650V, M2, TO-247-4L

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

文件：350.4 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide SiC MOSFET - 33 mohm, 650V, M2, TO-247-4L

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

文件：325.79 Kbytes 页数：8 Pages

ONSEMI

安森美半导体