丝印：H4L018N075SC；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 750 V, 13.5 m, 140 A

Features • Typ. RDS(on) = 13.5 m @ VGS = 18 V Typ. RDS(on) = 18 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 262 nC) • High Speed Switching with Low Capacitance (Coss = 365 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable Typical Applications • Automotive On Board C

文件：353.48 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 13.5mohm, 750V, M2, TO247−4L

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie • Qualified for Automotive According to AEC−Q101\n• Automotive grade\n• 750V rated\n• Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A\n• High Speed Switching and Low Capacitance\n• 100% UIL Tested\n• Devices are RoHS Compliant;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750V, M2, TO-247-4L

Features • Typ. RDS(on) = 13.5 m @ VGS = 18 V Typ. RDS(on) = 18 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 262 nC) • High Speed Switching with Low Capacitance (Coss = 365 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−

文件：262.59 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SSDC33

ON/安森美

上传：深圳市瑞卓芯科技有限公司

SSDC33

ON/安森美

上传：深圳市瑞卓芯科技有限公司