丝印：H4L022120m3s；Package：TO247-4L；MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 151 nC) • High Speed Switching with Low Capacitance (Coss = 244 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • These Devices are RoHS Compliant Typical Applications • Automotive On Board C

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