首页 >FDPF20N50T>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IRFB20N50K

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •LowRDS(on) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/d

VishayVishay Siliconix

威世科技威世科技半导体

IRFB20N50K

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFB20N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFB20N50KPBF

HEXFETPowerMOSFET

Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyC

IRF

International Rectifier

IRFB20N50KPBF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB20N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFB20N50KPBF

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •LowRDS(on) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/d

VishayVishay Siliconix

威世科技威世科技半导体

IXFP20N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFQ20N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH20N50D

HighVoltageMOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features •NormallyONMode •Internationalstandardpackages •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •Levelshifting •Triggers •SolidStateRelays •CurrentRegulators •Activeload

IXYS

IXYS Corporation

详细参数

  • 型号:

    FDPF20N50T

  • 功能描述:

    MOSFET 500V 20A NCH MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi
24+
TO-220F-3
30000
晶体管-分立半导体产品-原装正品
询价
ON
23+
TO220F-3
520
原装进口、正品保障、合作持久
询价
FAIRCHILD/仙童
24+
TO-220F
479
只做原厂渠道 可追溯货源
询价
onsemi(安森美)
24+
TO-220F
7828
支持大陆交货,美金交易。原装现货库存。
询价
ON/安森美
21+
NA
25000
只做原装,假一罚十
询价
FAIRCHILD
24+
TO-220F
8866
询价
Fairchild
23+
TO-220F
7750
全新原装优势
询价
FAI
24+
TO22OF
5000
只做原装公司现货
询价
FAIRCHI
21+
TO-220F
12588
原装正品,自己库存 假一罚十
询价
三年内
1983
只做原装正品
询价
更多FDPF20N50T供应商 更新时间2025-5-6 17:26:00