DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

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FAIRCHILD

仙童半导体

N-Channel UniFETTM II MOSFET?

Description UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanc

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

无锡固电

功率 MOSFET，N 沟道，UniFETTM II，500 V，3 A，2.5 Ω，TO-220F

UniFETTM II MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于先进平面条形和 DMOS 技术。 该先进 MOSFET 系列在平面 MOSFET 产品中具有最小的通态电阻，还可提供卓越的开关性能和更高的雪崩能量强度。 此外，内部的栅源 ESD 二极管使 UniFET II MOSFET 产品可承受超过 2kV 的 HBM 冲击应力。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 2.1Ω （典型值）@ VGS = 10V, ID = 1.5A\n•低栅极电荷（典型值 6.2nC） \n•低 Crss（典型值 2.5pF） \n•100% 经过雪崩击穿测试\n•提高了 dv/dt 处理能力\n•改进了 ESD 防护能力\n•符合 RoHS 标准;

ONSEMI

安森美半导体