isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42.5mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：322.67 Kbytes 页数：2 Pages

ISC

无锡固电

250V N-Channel PowerTrench MOSFET

文件：494.16 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N 沟道，PowerTrench® MOSFET，250V，25A，42.5mΩ

该 N 沟道 MOSFET 采用飞兆半导体的 PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 •RDS(on) = 36.3mΩ （典型值）@ VGS = 10V, ID = 25A\n•快速开关速度\n•低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力\n•符合 RoHS 标准;

ONSEMI

安森美半导体

High Current FET Driver

文件：72.37 Kbytes 页数：4 Pages

TI

德州仪器

High Current FET Driver

文件：72.37 Kbytes 页数：4 Pages

TI

德州仪器

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b

文件：127.71 Kbytes 页数：16 Pages

NEC

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