N-Channel PowerTrench MOSFET 100V, 7.5A, 22m?

Features • rDS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • DC/DC converters and Off-Line UPS • Distributed

文件：266.42 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET

Features • Qg(tot) = 28nC (Typ.), VGS= 10V • RDS(ON) = 23mΩ , VGS = 10V, ID = 7.5A • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse)

文件：378.66 Kbytes 页数：7 Pages

UMW

友台半导体

N 沟道，PowerTrench® MOSFET，100V，7.5A，22mΩ

N-Channel PowerTrench® MOSFET, 100 V, 7.5 A, 22 mΩ •RDS(ON) = 19mΩ（典型值），VGS = 10V，ID = 7.5A\n•Qg(tot) = 28nC（典型值），VGS = 10V\n•低米勒电荷\n•低Qrr体二极管\n•优化高频率时的效率\n•UIS能力（单脉冲和重复脉冲）;

ONSEMI

安森美半导体

N-Channel 100-V (D-S) MOSFET

Application LED Backlighting Synchronous Rectifiers for SMPS o Power management « PWM Application

文件：2.944 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel PowerTrench짰 MOSFET 100V, 7.5A, 22m廓

文件：317.79 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N-Channel 100 V (D-S) MOSFET

文件：1.02227 Mbytes 页数：9 Pages

VBSEMI

微碧半导体