FDPF6N60ZUT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

FDPF6N60ZUT

N-Channel MOSFET, FRFET 600V, 4.5A, 2廓

FDPF6N60ZUT_12

N-Channel MOSFET, FRFET 600V, 4.5A, 2廓

FIR6N60BPG

N-ChannelPowerMOSFET

FIR6N60FG

N-ChannelPowerMOSFET

FIR6N60LG

N-ChannelPowerMOSFET

FQB6N60

600VN-ChannelMOSFET

Features •5.5A,500V,RDS(on)=1.3Ω@VGS=10V •Lowgatecharge(typical17nC) •LowCrss(typical11pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQB6N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQB6N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQB6N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.