N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7m?

Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 42V Automotive Load Control • Starter / Altern

文件：246.82 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench MOSFET 75V, 80A, 4.7m?

Features • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 42V Automotive Load Control • Starter / Altern

文件：606.43 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.7 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：355.06 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道，PowerTrench® MOSFET，75V，80A，4.7mΩ

•rDS(ON) = 4.0 mΩ (Typ.), VGS = 10V, ID = 80A \n•Qg(tot) = 92nC (Typ.), VGS = 10V \n•Low Miller Charge \n•Low QRR Body Diode \n•UIS Capability (Single Pulse and Repetitive Pulse);

ONSEMI

安森美半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 75V 80A TO220-3

ONSEMI

安森美半导体