丝印：FDP2532；Package：TO-220；N-Channel PowerTrench® MOSFET 150 V, 79 A, 16 mΩ

Features • RDS(on) = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A • QG(tot) = 82 nC ( Typ.) @ VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Consumer Appliances • Synchronous Rectification • Battery Protection Circuit •

文件：1.13829 Mbytes 页数：15 Pages

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET 150V, 79A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 86nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82884 Applications • DC/DC conve

文件：275.65 Kbytes 页数：11 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：249.68 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道，PowerTrench® MOSFET，150V，79A，16mΩ

N-Channel PowerTrench® MOSFET 150 V, 79 A, 16 mΩ •RDS(ON) = 14mΩ（典型值），VGS = 10V，ID = 33A\n•Qg(tot) = 86nC （典型值），VGS = 10V\n•低米勒电荷\n•低 Qrr体二极管\n•UIS 能力（单脉冲和重复脉冲）\n•符合AEC Q101，以前的开发类型为82884;

ONSEMI

安森美半导体