25V 不对称双 N 沟道 PowerTrench® Power Clip MOSFET

该器件在双封装中包括两个专用 N 沟道 MOSFET。 该开关节点通过内部连接，能够为同步降压转换器提供简单的布局和布线。 控制SyncFETTM(Q1)和同步MOSFET(Q2)设计用于提供最佳电源效率。 • Q1： N-沟道\n• 最大值 rDS(on) = 3.8 mΩ（VGS = 10 V, ID = 20 A时）\n• 最大值 rDS(on) = 4.7 mΩ（VGS = 4.5 V, ID = 18 A时）Q2： N-沟道\n• 最大值 rDS(on) = 1.2 mΩ（VGS = 10 V, ID = 41 A时）\n• 最大值 rDS(on) = 1.4 mΩ（VGS = 4.5 V, ID = 37 A时）;

ONSEMI

安森美半导体

PowerTrench Power Clip

文件：437.42 Kbytes 页数：13 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Ch 80V Fast Switching MOSFETs

Description The FKD8014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD8014 meet the RoHS and Green Product requirement, 100 EAS guaranteed with full function reliability approved.

文件：609.52 Kbytes 页数：4 Pages

FETEK

台湾东沅

N-Ch 80V Fast Switching MOSFETs

Description The FKR8014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKR8014 meet the RoHS and Green Product requirement, 100 EAS guaranteed with full function reliability approved.

文件：605.64 Kbytes 页数：4 Pages

FETEK

台湾东沅

LED DIGIT DISPLAY

文件：328 Kbytes 页数：4 Pages

FORYARD

复洋