isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 277A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.2mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：356.05 Kbytes 页数：3 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 40V, 277A, 2.2m廓

文件：773.37 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N 沟道，逻辑电平，PowerTrench® MOSFET，40V，277A，2.2mΩ

N-Channel Logic Level PowerTrench® MOSFET 40 V, 277 A, 2.2 mΩ •RDS(on) = 1.64mΩ （典型值）@ VGS = 10V, ID = 80A\n•QG(tot) = 345nC（典型值）@ VGS = 10V\n•Low Qrr = 77nC\n•UIS 能力（单脉冲和重复脉冲）\n•符合 RoHS 标准;

ONSEMI

安森美半导体

80 Amp Rectifier 20 to 45 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：664.94 Kbytes 页数：3 Pages

MCC

Low Pass Filter

文件：388.26 Kbytes 页数：3 Pages

MINI

Low Pass Filter

文件：388.26 Kbytes 页数：3 Pages

MINI