25V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET

该器件在双封装中包括两个专用N沟道MOSFET。 该开关节点通过内部连接，能够为同步降压转换器提供简单的布局和布线。 控制 MOSFET (Q1)和同步 SyncFET™ (Q2) 旨在提供优化的功效。 • Q1： N 沟道 \n•最大值 rDS(on) = 7.0 mΩ（VGS = 4.5 V，ID = 12 A 时）Q2： N 沟道 \n•最大值 rDS(on) = 2.2 mΩ（VGS = 4.5 V, ID = 23 A 时）\n•低电感封装缩短了上升/下降时间，从而减少了开关损耗\n•MOSFET集成可实现降低电路电感以及开关节点振铃噪声的优化布局;

ONSEMI

安森美半导体

PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET

文件：563.24 Kbytes 页数：15 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

High CMR, Bi-Directional, Logic Gate Optocoupler

Description The FOD8012 is a full duplex, bi-directional, high-speed logic gate Optocoupler, which supports isolated communications allowing digital signals to communicate between systems without conducting ground loops or hazardous voltages. It utilizes Fairchild’s proprietary co-planar packag

文件：226.03 Kbytes 页数：12 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Logic Gate Optocoupler, High CMR, Bi-Directional

Description The FOD8012A is a half duplex, bi−directional, high−speed logic gate Optocoupler, which supports isolated communications allowing digital signals to communicate between systems without conducting ground loops or hazardous voltages. It utilizes onsemi’s patented coplanar packaging

文件：198.53 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

1.0625節?.25Gbps GBIC Transceiver

文件：383.24 Kbytes 页数：8 Pages

SOURCE

索尔思光电