N-Channel PowerTrench짰 MOSFET 100V, 67A, 4.5m

文件：669.29 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：318.86 Kbytes 页数：2 Pages

ISC

无锡固电

N 沟道 PowerTrench® MOSFET 100V，67A，4.5mΩ

此 N 沟道 MOSFET 采用 Fairchild 先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •RDS(on) = 3.8mΩ （典型值）@ VGS = 10V, ID = 100A\n•快速开关速度\n•低栅极电荷，QG = 57nC（典型值）\n•高性能沟道技术可实现极低的 RDS(on)\n•高功率和高电流处理能力\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT045N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used a wide variety of applications. Application l Power switch l DC/DC converters

文件：976.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT045N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01255 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT045N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：943.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体