isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=40A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =20mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.16 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel, PowerTrench??MOSFET

General Description This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 38 A, 60 V. RDS(on) = 0.02

文件：83.16 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=38A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =21mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件：763.2 Kbytes 页数：4 Pages

BYCHIP

百域芯