6 AMP FAST RECOVERY BRIDGE RECTIFIERS

文件：254.06 Kbytes 页数：1 Pages

DEC

20V P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V

文件：80.52 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

20V P-Channel 1.8V Specified PowerTrench MOSFET

ONSEMI

安森美半导体

P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –5.5 A, –20 V RDS(ON) = 35 mW @ VGS = –4

文件：216.51 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

P-Channel 2.5V Specified PowerTrench MOSFET

General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –5.5 A, –20 V RDS(ON) = 35 mW @ VGS = –4

文件：216.51 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

P-Channel 2.5V PowerTrench Specified MOSFET

文件：66.83 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体