首页 >FDB6035AL_Q>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

FDB6035L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6035

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·46A,30VRDS(ON)=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6035AL

N-Channel,LogicLevel,PowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·46A,30VRDS(ON)=

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6035AL

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

FDD6035AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=46A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6035AL

N-channelEnhancementModePowerMOSFET

Features VDS=30V,ID=80A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDP6035AL

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6035AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=48A@TC=25℃ ·DrainSourceVoltage- :VDSS=120V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP6035L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6035L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=58A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    FDB6035AL_Q

  • 功能描述:

    MOSFET N-Channel PowerTrench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
0307+
TO-263-2
1755
就找我吧!--邀您体验愉快问购元件!
询价
FAIRCHILD/仙童
23+
TO-263
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
24+
TO-262
2835
原装现货假一赔十
询价
FAIRCHILD/仙童
24+
TO-263
9000
只做原装,欢迎询价,量大价优
询价
FAIRCHILD/仙童
2450+
TO263-3
8850
只做原装正品假一赔十为客户做到零风险!!
询价
FAIRCHILD
24+
TO263
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
询价
FAIRCHIL
2023+环保现货
TO-263
18000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
FAIRCHI
23+
TO-263
8560
受权代理!全新原装现货特价热卖!
询价
FAIRCHIL
2023+
TO-263
50000
原装现货
询价
FAIRCHILD
25+
TO-263
4500
全新原装、诚信经营、公司现货销售
询价
更多FDB6035AL_Q供应商 更新时间2025-7-26 10:02:00