FDB604技术资料参数库存现货仙童半导体DEC-114ic电子网

首页 >FDB604>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
FDB604	文件：254.06 Kbytes Page：1 Pages	6 AMP FAST RECOVERY BRIDGE RECTIFIERS 文件：254.06 Kbytes 页数：1 Pages	DEC	DEC
FDC604	文件：359.42 Kbytes Page：8 Pages	P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V 文件：359.42 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDC604P	文件：359.42 Kbytes Page：8 Pages	P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V 文件：359.42 Kbytes 页数：8 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
FDC604P	文件：91.48 Kbytes Page：5 Pages	P-Channel 1.8V Specified PowerTrench MOSFET 文件：91.48 Kbytes 页数：5 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多FDB604供应商更新时间2026-4-17 11:39:00