N-Channel Power Trench짰 MOSFET 40V, 110A, 1.8m廓

Features ■ Typ rDS(on) = 1.31mΩ at VGS = 10V, ID = 80A ■ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated

文件：400.12 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N 沟道，PowerTrench® MOSFET，40 V，110 A，1.8 mΩ

N-Channel PowerTrench® MOSFET, 40 V, 110 A, 1.8 mΩ •典型 rDS(on) = 1.31 mΩ（VGS = 10 V、ID = 80 A）\n•典型 Qg(tot) = 107 nC（VGS = 10 V、ID = 80 A）\n•UIS 能力\n•符合 RoHS 标准\n•符合 AEC Q101;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET

Features ■ Typical RDS(on) = 0.9 mΩ at VGS = 10V, ID = 80 A ■ Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ PowerTrain Management ■ Solenoid and Motor Drivers ■ Integrated Starter/Alter

文件：385.77 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel PowerTrench짰 MOSFET

文件：523.35 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司