N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ■ rDS(ON)

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FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=54A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

30V N沟道PowerTrench® MOSFET

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 rDS(ON) = 14.5mΩ，VGS = 4.5V，VD = 40V\n rDS(ON) = 11.6mΩ，VGS = 10V，VD = 40V\n 高性能沟道技术可实现极低的RDS(ON)\n 低栅极电荷 \n 高功率和高电流处理能力\n 符合RoHS标准;

ONSEMI

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N-Channel PowerTrench MOSFET

文件：127.5 Kbytes 页数：11 Pages

FAIRCHILD

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N-Channel PowerTrench짰 MOSFET 30V, 58A, 9m廓

文件：503.61 Kbytes 页数：11 Pages

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N-Channel 30-V (D-S) MOSFET

文件：1.01995 Mbytes 页数：8 Pages

VBSEMI

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