20V P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V

文件：80.52 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

20V P-Channel 1.8V Specified PowerTrench MOSFET

ONSEMI

安森美半导体

20V P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V

文件：80.52 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -28A@ TC=25℃ ·Drain Source Voltage- : VDSS= -20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 30mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电

Heyco® Retaining Sealing Washers

文件：90.79 Kbytes 页数：1 Pages

HEYCO