isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=14A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：328.22 Kbytes 页数：2 Pages

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N-Channel Logic Level PowerTrench MOSFET

文件：249.78 Kbytes 页数：7 Pages

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N 沟道，PowerTrench® MOSFET，逻辑电平，60V，80A，6mΩ

N-Channel Logic Level PowerTrench® MOSFET 60V, 80A, 6mΩ, Fairchild’s latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. •RDS(on) = 4.6mΩ （典型值） @ VGS = 10V, ID = 80A\n•高性能沟道技术可实现极低的 RDS(on)\n•低栅极电荷\n•高功率和高电流处理能力\n•符合 AEC Q101 标准\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N-Channel Logic Level PowerTrench MOSFET

文件：614.9 Kbytes 页数：8 Pages

FAIRCHILD

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =6.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：333.08 Kbytes 页数：2 Pages

ISC

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Mobile Phone Power Management System

文件：791.97 Kbytes 页数：1 Pages

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致新科技