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型号	下载订购	功能描述	制造商上传企业	LOGO
CMPA2060035F	文件：1.02124 Mbytes Page：10 Pages	35 W, 2.0 - 6.0 GHz, GaN MMIC Power Amplifier Description Wolfspeed’s CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri 文件：1.02124 Mbytes 页数：10 Pages	WOLFSPEED	WOLFSPEED
CMPA2060035F1	文件：1.61667 Mbytes Page：17 Pages	35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA2060035F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri 文件：1.61667 Mbytes 页数：17 Pages	WOLFSPEED	WOLFSPEED
CMPA2560025D	文件：1.35046 Mbytes Page：11 Pages	25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif 文件：1.35046 Mbytes 页数：11 Pages	WOLFSPEED	WOLFSPEED
CMPA2560025F	文件：999.29 Kbytes Page：12 Pages	25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Description Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve 文件：999.29 Kbytes 页数：12 Pages	WOLFSPEED	WOLFSPEED
CMPA2735015D	文件：610.89 Kbytes Page：9 Pages	15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA2735015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve 文件：610.89 Kbytes 页数：9 Pages	WOLFSPEED	WOLFSPEED
CMPA2735015S	文件：689.56 Kbytes Page：11 Pages	15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift vel 文件：689.56 Kbytes 页数：11 Pages	WOLFSPEED	WOLFSPEED
CMPA2735030D	文件：468.6 Kbytes Page：9 Pages	30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and hi 文件：468.6 Kbytes 页数：9 Pages	WOLFSPEED	WOLFSPEED
CMPA2735030S	文件：1.45261 Mbytes Page：17 Pages	30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA2735030S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve 文件：1.45261 Mbytes 页数：17 Pages	WOLFSPEED	WOLFSPEED
CMPA2735075D	文件：386.72 Kbytes Page：9 Pages	75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velo 文件：386.72 Kbytes 页数：9 Pages	WOLFSPEED	WOLFSPEED
CMPA2735075F1	文件：1.90341 Mbytes Page：10 Pages	75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA2735075F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dr 文件：1.90341 Mbytes 页数：10 Pages	WOLFSPEED	WOLFSPEED

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技术参数

Type：
DIP/MOS
Vdss(V)：
120
Ids(A)：
120
Vth(V)：
3
Rds(Ω)-10V：
0.0058
Rds(Ω)-4.5V：
0.007
Channel：
N场
Pd(W)：
250
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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	CMP01EZ	AD	1430+	DIP	5800	全新原装,公司大量现货供应,绝对正品	询价
深圳市粤科源兴科技有限公司	CMPWR300	CMD	13+	SOP-8	1716	原装分销	询价
深圳市星佑电子有限公司	CMP401GRU	AD	02+/03+	TSSOP16	121	全新原装100真实现货供应	询价
深圳市恒创达实业有限公司	CMPD2838TR	CENTRAL	17+	SOT23-3	6200	100%原装正品现货	询价
深圳市利加科技有限公司	CMPSH-3A	CSC	16+	NA	8800	原装现货,货真价优	询价
深圳市一线半导体有限公司	CMP02		24+		50		询价
深圳市福安瓯科技有限公司	CMPWR025M	CMD	25+	TSSOP8	2500	强调现货,随时查询!	询价
深圳市毅创腾电子科技有限公司	CMPSH-3TR-LT	CENTRPAL		SOT23	3120	正品原装--自家现货-实单可谈	询价
深圳市卓越微芯电子有限公司	CMPZ5262BTR	CENTRAL	25+	SOT23	11660	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市豪迈兴电子有限公司	CMP01CJ/883	AD/PMI	24+	CAN8	4652	公司原厂原装现货假一罚十!特价出售!强势库存!	询价

更多CMP供应商更新时间2025-11-24 11:04:00

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