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型号	下载订购	功能描述	制造商上传企业	LOGO
CMPA2060035F1	文件：1.61667 Mbytes Page：17 Pages	35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA2060035F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dri 文件：1.61667 Mbytes 页数：17 Pages	WOLFSPEED	WOLFSPEED
CMPA2560025D	文件：1.35046 Mbytes Page：11 Pages	25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drif 文件：1.35046 Mbytes 页数：11 Pages	WOLFSPEED	WOLFSPEED
CMPA2560025F	文件：999.29 Kbytes Page：12 Pages	25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Description Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve 文件：999.29 Kbytes 页数：12 Pages	WOLFSPEED	WOLFSPEED
CMPA2735015D	文件：610.89 Kbytes Page：9 Pages	15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA2735015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve 文件：610.89 Kbytes 页数：9 Pages	WOLFSPEED	WOLFSPEED
CMPA2735015S	文件：689.56 Kbytes Page：11 Pages	15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift vel 文件：689.56 Kbytes 页数：11 Pages	WOLFSPEED	WOLFSPEED
CMPA2735030D	文件：468.6 Kbytes Page：9 Pages	30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and hi 文件：468.6 Kbytes 页数：9 Pages	WOLFSPEED	WOLFSPEED
CMPA2735030S	文件：1.45261 Mbytes Page：17 Pages	30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA2735030S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve 文件：1.45261 Mbytes 页数：17 Pages	WOLFSPEED	WOLFSPEED
CMPA2735075D	文件：386.72 Kbytes Page：9 Pages	75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA2735075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velo 文件：386.72 Kbytes 页数：9 Pages	WOLFSPEED	WOLFSPEED
CMPA2735075F1	文件：1.90341 Mbytes Page：10 Pages	75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA2735075F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron dr 文件：1.90341 Mbytes 页数：10 Pages	WOLFSPEED	WOLFSPEED
CMPA2738060F	文件：2.69983 Mbytes Page：22 Pages	60 W, 2.7 - 3.8 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA2738060F is a packaged, high-power MMIC amplifier producing 85W of saturated output power over the 2.7 - 3.8 GHz frequency range. With 27dB of large signal gain and achieving 50 power-added efficiency or higher, the CMPA2738060F is ideally suited to support a variet 文件：2.69983 Mbytes 页数：22 Pages	WOLFSPEED	WOLFSPEED

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晶体管资料

型号：
CMP18-12
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
超高频/特高频（UHF）_功率放大（L）
封装形式：
直插封装
极限工作电压：
36V
最大电流允许值：
5A
最大工作频率：
512MHZ
引脚数：
3
可代换的型号：
最大耗散功率：
67W
放大倍数：
图片代号：
B-10
vtest：
36
htest：
512000000
atest：
5
wtest：
67

技术参数

Type：
DIP/MOS
Vdss(V)：
120
Ids(A)：
120
Vth(V)：
3
Rds(Ω)-10V：
0.0058
Rds(Ω)-4.5V：
0.007
Channel：
N场
Pd(W)：
250
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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	CMP04FY	ADI	22+	N/A	60000	专注配单,只做原装现货	询价
深圳市澳亿芯电子科技有限公司	CMPD4150TR	CENTRAL	25+	SOT23	2670	旗舰店	询价
深圳市赛美科科技有限公司	CMPT6517TR	CENTRAL	新年份	SOT-23	18000	原装正品大量现货,要多可发货,实单带接受价来谈!	询价
深圳市芯球通科技有限公司	CMP04FSZ-REEL	ADI(亚德诺)	26+		13620	公司只做原装正品,假一赔十	询价
深圳市百诺芯科技有限公司	CMPSH-3TR-LT	CENTRPAL	23+	SOT-23	24981	原装正品代理渠道价格优势	询价
深圳市欧立现代科技有限公司	CMP02C	AD	26+	SOP-8	6980	原装现货,可开13%税票	询价
富凯科技(深圳）有限公司	CMPFCD86GN220	CHAMPION	24+	TO-220AC	9000	只做原装，欢迎询价，量大价优	询价
北京三盛恒业电子有限公司	CMP321609UD4R7MT	风华高科	26+	N/A	2500	进口原装,优势现货	询价
深圳市一线半导体有限公司	CMPT8099	CNS	24+		2283		询价
深圳市宝芯创电子有限公司	CMPTA42E-TR	CENTRAL	2026+	SOT-23	34681	全新原装现货,可出样品,可开增值税发票	询价

更多CMP供应商更新时间2026-10-31 14:00:00

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