Description

Cree’s CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

properties compared to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also offer greater power density and wider bandwidths compared

to Si and GaAs transistors. This MMIC contains a two-stage reactively matched

amplifier design approach enabling high power and power added efficiency to

be achieved in a 5mm x 5mm, surface mount (QFN package).

Features

• 33 dB Small Signal Gain

• 21 W Typical PSAT

• Operation up to 50 V

• High Breakdown Voltage

• High Temperature Operation

• 5 mm x 5 mm Total Product Size

Applications

• Civil and Military Pulsed

Radar Amplifiers

CMPA2735015S属于RF/IF，射频/中频和 RFID > 射频放大器。WOLFSPEED, INC.制造生产的CMPA2735015S射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。