CMPA1C1D060D中文资料WOLFSPEED数据手册PDF规格书

厂商型号	CMPA1C1D060D
功能描述	60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier
文件大小	237.11 Kbytes
页面数量	8 页
生产厂商	WOLFSPEED, INC.
企业简称	WOLFSPEED
中文名称	WOLFSPEED, INC.官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-17 8:08:00
人工找货	CMPA1C1D060D价格和库存，欢迎联系客服免费人工找货

Description

Wolfspeed’s CMPA1C1D060D is a gallium nitride (GaN) High

Electron Mobility Transistor (HEMT) based monolithic microwave

integrated circuit (MMIC) on a Silicon Carbide substrate, using a

0.25 μm gate length fabrication process. GaN-on-SiC has superior

properties compared to silicon, gallium arsenide or GaN-on-Si,

including higher breakdown voltage, higher saturated electron drift

velocity and higher thermal conductivity. GaN HEMTs also offer

greater power density and wider bandwidths compared to Si, GaAs,

and GaN-on-Si transistors.

Features

• 26 dB Small Signal Gain

• 60 W Typical PSAT

• Operation up to 40 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.209 x 0.240 x 0.004 inches

Applications

• Satellite Communications Uplink

• PTP Radio